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| Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 2.10.1 Unit: mm s Features q q q 0.425 1.250.1 0.425 High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.00.2 1.30.1 0.65 3 2 0.90.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 50 5 50 150 150 -55 ~ +150 Unit V V V mA mW C C 0.70.1 0 to 0.1 0.20.1 1:Base 2:Emitter 3:Collector EIAJ:SC-70 S-Mini Type Package Marking symbol : AM s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 100 0.15-0.05 +0.1 s Absolute Maximum Ratings (Ta=25C) 0.2 0.3-0 +0.1 Unit A A V V V 50 50 5 200 0.06 250 1.5 500 0.3 VCE(sat) V MHz pF *h FE Rank classification Rank hFE Marking Symbol Q 200 ~ 400 AMQ R 250 ~ 500 AMR 1 Transistor PC -- Ta 240 120 Ta=25C 200 100 50 2SC4562 IC -- VCE 60 VCE=10V 25C IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 80 Collector current IC (mA) IB=300A 250A 40 Ta=75C 30 -25C 20 120 60 200A 150A 80 40 100A 20 50A 40 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 1 3 10 30 100 300 1000 25C -25C IC/IB=10 600 hFE -- IC 600 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 500 Ta=75C 400 25C -25C 300 Transition frequency fT (MHz) 3 10 30 100 500 400 300 200 200 100 100 0 0.1 0.3 1 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 6 Collector output capacitance Cob (pF) 5 IE=0 f=1MHz Ta=25C 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
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